摘要
采用全自对准介质盖栅工艺，通过合理设计，研制成功一种高增益硅超高频功率ＳＩＴ。在４００ＭＨｚ工作频率、５０Ｖ工作电压下，其输出功率Ｐｏ为４０Ｗ，漏极效率η＿Ｄ接近６０％，功率增益Ｇｐ高达１６ｄＢ。Ｐｏ＝２５Ｗ时，三阶交调３ＩＭ为－１６ｄＢ；Ｐｏ＝２．５Ｗ时，３ＩＭ为－５０ｄＢ。
A Si high-gain UHF power SIT is developed by means of optimum design and full self-alignment insulator-covered gate technology. When operated at f_o=400MHz and V_(DD)=50V,its output power is 40W, the drain efficiency approaches 60%, and the power gain G_p as high as 16dB is realised.It also shows superior linearity performance. When P_o is 25W, the three order intermodulation 3IM is-16dB, and when P_o is 2.5W, 3IM is-50dB.
出处
《半导体情报》
1996年第4期24-27,共4页
Semiconductor Information
关键词
硅
高增益
SIT
半导体器件
制造工艺
Sillicon
High-gain
SIT
Full self-alignment insulator-covered gate
