超高速GaAs集成电路封装材料、工艺和结构的研究

Research on Packaging Materials, Processes and Structures for Ultrahigh-Speed GaAs ICs

着重描述了新型莫来石材料的性能、工艺方面的进展情况，探讨了新的封装结构对封装性能的影响，最后得到的封装外壳可很好地满足ＧａＡｓ超高速集成电路的封装要求。

In this paper the characteristics and processes of new mullite materials are described.The influences of the Packaging structures on packging property are discussed. The packages for 500～1000 gates GaAs IC have been achieved.