摘要
采用ＰＥＣＶＤ技术，以ＴＥＯＳ为源，对Ｉｎ０．５３Ｇａ０．４７Ａｓ材料进行表面钝化，研究了ＳｉＯ２／Ｉｎ０．５３Ｇａ０．４７Ａｓ的界面态，提出降低界面态密度的方法，使其降低到８．５×１０１０ｅＶ－１ｃｍ－２．
The surface passivations of In_(0.53) Ga_(0.47) As materials have been reported in the paper. SiO_2 thin films with TEOS as aprecursor,were prepared by means of PECVD technique.Interface states of SiO_2/In_(0.53)Ga_(0.47)As were investigated and the method of decreasing interface states to 8.5×10￣(10)eV￣-1cm￣-2 was suggested.
出处
《半导体情报》
1996年第4期54-57,共4页
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