摘要
研究了用于室温红外探测的非晶硅薄膜晶体管。分别从理论和实验角度对非晶硅薄膜晶体管的沟道电流随着宽长比的线性变化进行了分析验证。理论分析和实验结果表明,增大晶体管的宽长比不会影响沟道电流温度系数,但可以显著改善探测器的探测率,从而为a-SiTFT红外探测器的优化设计指明了方向。
The a-Si thin film transistor （TFT） used as room temperature infrared detector is studied. The channel current of a-Si TFT changes linerly with the ratio of width to length （W/L） ,which is proved by theoretic analysis and experiment respectively. According to the theoretic analysis and experiment,increasing W/L does not influence the temperature coeffcient of current （ TCC ）. However, larger W/L improved the detectivity evidently, which presents the orientation of a-Si TFT infrared detector design optimization.
出处
《激光与红外》
CAS
CSCD
北大核心
2005年第10期709-711,共3页
Laser & Infrared
关键词
非晶硅薄膜晶体管
室温红外探测器
电流温度系数
宽长比
探测率
a-Si TFT
room temperature infrared detector
temperature coefticient of current
ratio of width to length
detectivity
