N^+注入ZnO薄膜表面性质的变化

Variation of Surface Properties of ZnO Films by the Implantation of Nitrogen Ions

用直流反应磁控溅射法制备ZnO薄膜,将N+注入ZnO薄膜经快速热退火(RTA)后,通过XRD,AFM,UV-VIS-NIR分光光度计等比较了N+注入后ZnO薄膜的电阻率、导电类型、表面形貌和可见光透过率等的变化。经不同条件处理后的ZnO薄膜均具有相同的择优取向(002)。经RTA后颗粒普遍增大;N+注入后经RTA颗粒增大明显,最大有1μm。N+注入后,使ZnO膜的导电类型由原来的n型转变为弱p型。

Studied were the variations of surface properties of N^＋-implanted ZnO films. The ZnO films deposited on glass substrate by DC reactive magnetron sputtering were firstly implanted with N^＋, and subsequently subjected to rapid thermal annealing （RTA） in N2 ambient. The crystallographic properties and surface morphology were also examined by XRD and AFM, respectively. Obtained results indicate that the films all have a preferred orientation of （002）, and average size of crystalline particles increases after RTA. The implantation of nitrogen ions and RTA increases crystalline particles of ZnO films Its size is about 1 μm. Next, the resistivity of ZnO films is measured by the four-point probe method and the conduction type is studied. It indicates that the oxwen vocations may be partly compensated by the implantation of nitrogen ions.