期刊文献+

sol-gel法制备GaN纳米棒的研究 被引量:1

Study on GaN Nanorods Prepared by Sol-gel Method
下载PDF
导出
摘要 采用简单、有效的sol-gel法在1 000℃时通过氧化镓凝胶和氨气反应成功合成了GaN纳米棒。XRD和SAED的测试结果表明,GaN纳米棒为六方纤锌矿结构。用TEM观察发现,大部分GaN纳米棒平直而光滑,直径为200 nm^1.8μm,最长的纳米棒达几十微米。室温下光致发光谱的测试发现了较强的355.6 nm处的紫外发光峰和445.9 nm处的蓝色发光峰。 GaN nanorods were successfully synthesized through the reaction of Ga203 gel with NH3 at 1 000℃ by a simple and efficient sol-gel process, The nanorods were confirmed as crystalline wurtzite GaN by XRD and SAED, TEM displays that most of the GaN nanorods are straight and smooth, with diameters ranging from 200 nm to 1,8 μm and lengths typically up to tens of microns. Photoluminescence spectra at room temperature showed a strong ultraviolet luminescence peak located at 355.6 nm and a blue luminescence peak located at 445.9 nm
出处 《电子元件与材料》 CAS CSCD 北大核心 2005年第11期13-15,共3页 Electronic Components And Materials
基金 国家自然科学基金资助项目(90201025 90301002)
关键词 半导体技术 GAN纳米棒 SOL-GEL法 光致发光 semiconductor technology GaN nanorods sol-gel photoluminescence
  • 相关文献

参考文献13

  • 1Nakamura S.The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes [J].Science,1998,281:956.
  • 2Morales A M,Lieber C M.A laser crystalline semiconductor nanowires [J].Science,1998,279:208.
  • 3Han W Q,Fan S S,Li Q Q,et al.Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction [J].Science,1997,277:1287.
  • 4Cheng G S,Chen S H,Zhu X G.Highly ordered nanostructures of single-crystalline GaN nanowires [J].Mater Sci Eng,2000,286:165.
  • 5Duan X F,Lieber C M.Laser-assisted catalytic growth of single crystal GaN nanowires [J].J Am Chem Soc,2000,122:188.
  • 6Shi W S,Zheng Y F,Wang N.Microstructure of gallium nitride nanowires synthesized by oxide-assisted method [J].Chem Phy Lett,2001,345:377.
  • 7He M Q,Minus Indira,Zhou P Z,et al.Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3 [J].Appl Phys Lett,2000,77(23):3731.
  • 8Han W,Redlich P,Ernst F,et al.Synthesis of GaN-carbon composite nanotubes and GaN nanorods by arc-discharge in nitrogen atmosphere [J].Appl Phys Lett,2000,76(5):652.
  • 9Li J Y,Chen X L,Qiao Z Y,et al.Formation of GaN nanorods by a sublimation method [J].J Crystal Growth,2000,213:408.
  • 10Han W Q,Zettl A.Pyrolysis approach to the synthesis of gallium nitride nanorods [J].Appl Phys Lett,2002,80:303.

共引文献7

同被引文献15

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部