多量子阱超辐射发光二极管(SLD)热分布计算

Calculation of Thermal Distribution for Multi-quantum Well Superluminescent Diode

对由8个量子阱所组成的条形超辐射发光二极管(Superlum inescent d iode,SLD)进行了热分析,计算了不同器件结构下的热阻和温度分布。计算结果表明,热阻变化受芯片宽度和长度的影响较大,可以达到两个数量级;当注入功率达到1 W时,有源区的温度将接近50 K。该分析对有效地设计芯片的结构,减少温度升高对SLD稳定性的影响具有指导意义。

Superluminescent diodes （SLDs） can usually be taken as a light source for fiber optic-gyroscopes, wavelength-division multiplexing （WDM） systems and optical coherence tomography （OCT）. Because of their high working current density, the output power, lifetime and the spectrum stability may be strongly influenced by the temperature in the active region increasing with injection current. Using MQWs （multiple quantum wells） as active layers can decrease the working current density, reduce Joule heating effect, and increase the differential gain of the device. In this contribution, we calculated the thermal resistance and temperature distribution of InGaAsP/InP MQW SLDs which are influenced by their lateral chip size and composition with twodimension thermal flow model. The results reveal that when the injection power reaches 1 W, the temperature of active region will be almost 50 K. The width and length of chip also have strong influence on the thermal resistance which can reach two orders of magnitude. The thermal resistance will change from 290 K/W to 68 K/W when width of chip was increased from 500μm to 2 500μm. For the length of chip, there is similar result. But there is small effect on thermal resistance for active width. All the results will be useful for structure and composition design of SLD.