CdSe纳米线阵列的制备及其表征(英文)

Preparation and Characterization of CdSe Nanowire Arrays

通过在含有SeSO32-和Cd2+的室温水溶液中,用模板-电沉积法在纳米孔阵列阳极氧化铝膜(AAM)模板中制备了高有序性的CdSe纳米线阵列,并对其形貌、结构和组分进行了表征。扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果表明,纳米线阵列中的CdSe纳米线具有相同的长度和直径,分别对应于使用的AAM模板的厚度和孔径;X-射线衍射(XRD)和X-射线能谱(EDAX)结果表明,CdSe纳米线中Cd和Se的化学组成非常接近于1∶1,其结构为立方CdSe。另外,对模板-电沉积法制备CdSe纳米线的机理进行了讨论。

Highly-ordered CdSe nanowire arrays embedded in anodic alumina membranes （AAM） with nanopore arrays were prepared by template-electrodeposition method in aqueous solution containing SeSO3^2- and Cd^2＋ at room temperature. The results of scanning electron microscope （SEM） and transmission electron microscopy （TEM） indicate that CdSe nanowires with uniform length and diameter are obtained, and the diameter and length of CdSe nanowires are dependent on the pore diameter and the thickness of the applied AAM template. X-ray energy dis- persion analysis （EDAX） indicates that the chemical composition of Cd and Se is very close to 1：1 stoichiometry. X-ray diffraction （XRD） and electron diffraction pattern investigations demonstrate that CdSe nanowires are cubic CdSe crystal. Furthermore, the preparation mechanism of CdSe nanowires is discussed.