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硅四端横向压阻式压力传感器的解析模型 被引量：2

An Analysis Model of A Four-Terminal Silicon Piezoresistive Transducer
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摘要 用摄动法求解了硅横向压阻效应四端器件的偏微分方程.用渐近解的分析方法对所求到的解进行简化,导出了硅横向压阻效应四端压力传感器的输出电压表达式.所得公式能够定量表达输出电压与输入参量和器件几何参数的关系,所得到结果与数值解和实验结果吻合. A differential equation of a silicon piezoresistive transducer has been resolved with methods of perturbation and asymptotic series, by which an expression of output voltages for a four-terminal silicon piezoresistive transducer was given. The expression can be used in calculation for relationships of the input voltage, output voltage and device geometry parameter. The results based on the expressions are in agreement with experimental and numerical values.
作者 周国祥 柯导明 陈军宁 徐海卫
机构地区 合肥工业大学计算机系 安徽大学电子工程系
出处 《中国科学技术大学学报》 CAS CSCD 北大核心 2005年第5期634-638,共5页 JUSTC
基金 国家"863"计划(2003AA1Z1400)
关键词 硅 压阻效应 四端器件 解析模型 压力传感器 摄动法 silicon piezoresistive effects four-terminal silicon device analysis model
分类号 TP212 [自动化与计算机技术—检测技术与自动化装置]
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参考文献7

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二级参考文献37

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中国科学技术大学学报
2005年 第5期

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