期刊文献+

气压和温度对气相法生长PbI_2晶体的影响 被引量:2

Effect of temperature and pressure on growth of PbI_2 crystal by vapor-growth technique
下载PDF
导出
摘要 用平衡气压方程对气相法生长PbI2晶体过程中压强和温度对晶体组分的影响进行了计算.结果表明,在一定的温度下,总压强越高,PbI2开始分解的温度越高;在一定的总压强下,系统温度越低,PhI2分解的比例越小. The effects of temperature and total pressure on compositions of PbI2 crystal grown by vapor phase were approximately calculated by equilibrium vapor equation and the results showed that the higher the total pressure, the higher the dissociation temperature under the certain temperature and the lower the temperature, the minor the dissociation of PbI2 under a certain total pressure.
出处 《兰州大学学报(自然科学版)》 CAS CSCD 北大核心 2005年第5期74-76,共3页 Journal of Lanzhou University(Natural Sciences)
基金 真空低温技术与物理国家级重点实验室基金(51475040103JW2301)高等学校博士学科点专项科研基金(20040730029)资助项目.
关键词 气相法 PbI2晶体 平衡气压方程 vapor-growth technique PbI2 crystal equilibrium vapor equation
  • 相关文献

参考文献8

  • 1Shah K S, Bennett P, Klugerman M, et al.Lead iodide optical detectors for gamma ray spectroscopy[J]. IEEE Trans Nucl Sci, 1997, 44(3): 448-450.
  • 2Shan K S, Olschnner F, Moy L P, et al. Lead iodide X-ray detection systems[J]. Nucl Instrum Meth,1996, A380(1-2): 266-270.
  • 3Shan K S, Street R A, Dmitriyev Y, et al. X-ray imaging with PbI2-based a-Si:H flat panel detectors[J]. Nucl Instrum Meth, 2001, A458(1-2): 140-147.
  • 4Bennett P R, Shah K S, Dmitriyev Y, et al. Polycrystalline lead iodide films for digital X-ray sensors[J]. Nucl Instrum Meth, 2003, A505(1-2): 269-272.
  • 5Fornaro L, Saucedo E, Muscio L, et al. Lead iodide film deposition and characterization[J]. Nucl Instrum Meth, 2001, A458(1-2): 406-412.
  • 6Roth S, Willig W R. Lead iodide nuclear particle detectors[J]. Appl Phys Lett, 1971, 18(8): 328-330.
  • 7Manoel E R, Custodio M C C, Guimaraers F E G. Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors[J]. Materials Research, 1999, 2(2): 75-79.
  • 8Kurilo I V, Rybak O V. Effect of growth conditions on the morphology and structural perfection of vapor-grown PbI2 crystal[J]. Inorganic Materials,2002, 38(3): 362-365.

同被引文献36

引证文献2

二级引证文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部