拉曼光谱法计算多孔硅样品的温度

Temperature measurement from the Raman spectra of porous silicon

利用457·5nm固体激光器作为激发光源,得到了在不同功率激发下的多孔硅样品的拉曼光谱以及一些谱峰参数随功率的变化关系.在从前的理论研究中,认为是由于激光功率的增大导致样品局域温度升高,从而使样品局域粒径变小,并由此引起了一系列谱峰参数的变化.分别由520cm-1和300cm-1附近得到的随功率变化的拉曼谱图,详细讨论并计算了激光功率对多孔硅样品局域温度的定量影响,为拉曼光谱用于样品温度的定量测量奠定了实验基础.

Raman spectra of porous silicon are obtained using 457.5nm laser line, from which some relations between peak parameters and laser powers are obtained. Our previous theoretical research demonstrated that the increase of laser power leads to the increase of local temperature, and this results in the shrink of local size which gives rise to the variation of a series of peak parameters. In this article we discuss and calculate in detail the influence of laser power on the local temperature of porous silicon, which set the experimental basis for the quantitative measurement of temperature utilizing Raman spectrum.