摘要
用直流反应磁控溅射法在玻璃基片上,在不同氧分压条件下制备了一组TiO2低辐射薄膜样品。用原子力显微镜(AFM)观察了不同制备条件下得到的TiO2薄膜样品的表面形貌,并测量了它们的红外透过率,发现随着氧分压上升,薄膜晶粒长大,红外透射率降低。
TiO2 thin films were grown on glass substrate by DC reactive magnetron sputtering at different oxygen partial pressure. The morphology of TiO2 thin films deposited under various sputtering conditions were observed by using AFM, and optical transmittance spectra of TiO2 thin films were measured. The results show that the TiO2 thin films deposited under the higher oxygen pressure have the bigger crystallites and the lower infrared transmissivity.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2005年第5期418-420,共3页
Semiconductor Optoelectronics