基于10Gbit/s应用长波长光电二极管

A long wavelength photodiode for 10 Gbit/s applications

设计制作了一种基于10Gbit/s应用的正照平面结构的InGaAs/InPPIN高速光电二极管.该器件带宽达到19GHz,响应度>0.75A/W,暗电流<5nA,结电容<0.15pF.组件测试表明,器件适用于高速光通信及测量系统中对1310nm和1550nm波长光的探测.

A planar InGaAs/InP PIN high speed photodiode （PD） was developed for 10 Gbit/s applications. It＇s specifications included： 3 dB bandwidth, 19 GHz clock frequency, responsivity 〉 0.75 A/W, dark current 〈 5 hA, and junction capacitance 〈0. 15 pF. Tests in a receiver module indicate applicability for 10 Gbit/s high speed optical-flber communication and test systems at wavelengths of 1 310 nm and 1 550 nm.