摘要
为用HEMT晶体管设计L波段低驻波比放大电路,本文用输入无源复反射系数在输出反射平面上的共轭匹配区表达式,将驻波比约束转化为无源匹配区域的映射.同时为了计算放大电路低温下噪声,通过有损输入模型导出了噪声的温度关系式.实测CDMA-830MHz高温超导前端放大器噪声温度小于30K,输入驻波比小于1.3,输出驻波比小于1.8,增益大于17dB.
L band HEMT amplifiers applied inmobile communications must have low input VSWR, In this paper a graphic method is proposed to map the conjugated matched ГL to Гs plane to find optimized matching network. To calculate cryocooled LNA' s NF a lossy input network model is built and a temperature-dependent NF formula is obtained and verified experimentally. The cryocooled LNA in HIS front end is measured with Noise Temperature 〈 30 K, VSWRi 〈 1.3 and VSWRo 〈 1.8,Gain 〉 17dB.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2005年第9期1626-1628,共3页
Acta Electronica Sinica
基金
国家863项目(No.60071005)
北京科委项目
国家自然科学基金项目(No.60171016)
关键词
低温放大电路
电路设计
噪声特性
cryocooled LNA
MIC design
amplifier noise characteristics