摘要
本文论证了面结型低压齐纳二极管的击穿机理为隧道击穿．提出了一种新型的面结型低压齐纳二极管的结构，以及相应于此种结构的工艺流程．论述了衬底材料的选择等问题．实验结果表明，此种结构是成功的．做出了符合用户要求的低压齐纳二极管．
This article proved that the punch through theory of low voltage zener diode is tunneling breakdown. A method of making low voltage zener diode, and a new structure of low voltage zener diode are discussed. The selection of the substrate materical is discussed. The low voltage zener diodes whose properties accord with the demands have been fabricated.
