CaMoO_4薄膜的电化学制备技术研究

Study on electrochemical preparing techniques for CaMoO_4 thin films

采用恒电流的电化学技术,在高纯金属钼基体上直接制备了白钨矿结构的CaMoO4薄膜;其制备条件为:电流密度0.5mA/cm2,饱和Ca(OH)2溶液的pH值12.0,反应温度70℃,电化学沉积时间250min。X射线衍射(XRD)、X射线光电子能谱(XPS)和扫描电镜(SEM)分析测试表明,所制备的薄膜为表面均匀致密的四方晶系的CaMoO4单相多晶薄膜。

Crystallized CaMoO4 thin films with scheelite-structure were prepared on high pure molybdenum metal substrate in saturation Ca（OH）2 solution by galvanostatic electrochemical technique. The electrochemical processing conditions are as follows, the electrical current density was 0.5mA/cm^2, pH value of the solution was 12. 0, the reacting temperature was 70℃, and the duration of electrochemical reaction was 250rain. The asgrown CaMoO4 thin films were measured by XRD, SEM and XPS, and the results of the measurement reveal that CaMoO4 ceramics thin films are uniform and dense in surface with single tetragonal structure.