不同温度下硒化镉(CdSe)量子点的生长及荧光性研究

The study of luminescence and growth of CdSe quantum dots at different reaction temperature

研究了以氧化镉(CdO)和硒(Se)粉为前驱体,在三辛基膦(TOP)和油酸中合成无机半导体量子点(quantum dots,QDs)CdSe。研究了在不同的反应温度下粒子的生长,通过紫外吸收光谱(UV-Vis)、荧光发射光谱(PL)、透射电子显微镜(TEM)等手段跟踪反应过程并对样品性能进行了表征。实验结果表明,反应温度和反应时间对量子点的生长和荧光性能有很大的影响。

Monodispersed CdSe quantum dots were synthesized with cadmium oxide （CdO）, selenium（Se）, tri-noctylphosphine （TOP） and oleic acid at different reaction temperature. The influence of the temperature on growth process and the properties of the resultant CdSe nanocrystals were investigated. The temporal evolution of the absorption and room temperature photoluminescence spectra were used to follow the reaction process and to characterize the optical properties of as-prepared CdSe quantum dots. The experiment results showed that the reaction temperature and time have great impact on the growth and luminescence of CdSe quantum dots.