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多晶硅太阳电池的氮化硅薄膜性能研究 被引量：5

The Characteriztion of Silicon Niteride (SiN) Thin Films on Multi-crystalline Solar Cells
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摘要 用等离子体化学气相沉积(PECVD)法,通过改变[SiH4∶N2]/[NH3]的流量比沉积SiN薄膜.用椭圆偏振仪、准稳态光电导衰减法(QSSPCD)、X射线光电子能谱(XPS)、红外吸收光谱(IR)、反射谱,测试氮化硅薄膜的厚度、折射率、少子寿命、Si/N、氢含量、反射率.研究了多晶硅太阳电池沉积氮化硅薄膜的性能,结果发现:沉积温度350℃,沉积时间5min,[SiH4∶N2]/[NH3]=4∶1时,沉积氮化硅硅片寿命高、氢含量高钝化效果好、反射率低. In order to study the characterization of SiN thin films on multi-crystalline solar cells, silicon nitride films were deposited by means of the plasma chemical vapor deposition （PECVD） with difference flux of SiH4 and NH3 in the paper. The characterization of SiN thin films was studied by spectral ellipsometry, infrared absorption spectroscopy （IR）, X-ray Photoelectric Spectroscopy （XPS）, quasi-steady state photoconductor decay （QSSPCD） measurements and reflection spectra etc, The results show that the best condition to form SiN thin films is deposition temperature at 350℃ for 5min, the Si wafer with satisfied minor carriers lifetime and low reflectivity when the ratio of [SiH4：N2] / [NH3] equal to 4： 1.
作者 勾宪芳 许颖 任丙彦 马丽芬
机构地区 河北工业大学信息功能材料研究所 北京市太阳能研究所
出处 《河北工业大学学报》 CAS 2005年第5期27-30,共4页 Journal of Hebei University of Technology
基金 北京市科技新星计划(H020821480130)
关键词 多晶硅 太阳电池 等离子体化学气相沉积 氮化硅 少子寿命 polycrystalline silicon solar cell Silicon nitride PECVD carrier lifetime
分类号 TK512 [动力工程及工程热物理—热能工程]
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参考文献9

  • 1EigameI H E, Rohatgi A, Chen Z. Optimal Surface and Bulk Passivation of High Effciency Multicrystalline Silicon Solar Cells [A]. IEEE FIRST WORLD CONFERENCE ON PVEC [C]. Waikoloa, Hawaii, 1994, 1 323-1 326.
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二级参考文献10

  • 1Elgamel H E, Rohatgi A, Chen Z. Optimal Surface and Bulk Passivation of High Effciency Multicrystalline Silicon Solar Cells[A]. IEEE FIRST WORLD CONFERENCE ON PVEC[C], Waikoloa, Hawaii, 1994,1323--1326.
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共引文献6

同被引文献18

引证文献5

二级引证文献5

河北工业大学学报
2005年 第5期

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