硫化钨花形二维纳米晶的控制生长研究

Study on the Controlled Growth of WS_2 Floriated (2D) Nanocrystal

以氧化钨为原料,硫化氢为气源在阳极氧化铝(AAO)模板基底上采用气固法制备出了硫化钨花形二维纳米晶体。采用X射线衍射(XRD)、电子透射显微镜(TEM)和场发射电子扫描显微镜(SEM)等手段对所制备的样品进行了检测分析,证实所得灰黑色产物是硫化钨单晶,片状单晶长宽约为几个微米,厚度约30nm。本文对纳米花晶体的制备、影响因素等进行了初步探讨。

WS： floriated nanocrystals were prepared by solid - gas reaction with tungsten oxide powder and H2S gas on substrate of anodic aluminum oxide （AAO） template. The microstruture of the WS2 floriated nanocrystal was investigated by means of transmission electron microscopy （TEM）, X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The thickness of every petal is about 30nm, length and width of the WS2 layered monocrystal are several microns respectively. The influencing conditions of WS2 floriated nanocrystal＇s growth are discussed in this article.