CdZnT e晶片表面化学抛光研究

Study on Chemical Polishing of CdZnTe Wafer Surface

采用不同浓度的B r2-M eOH作为抛光液对CdZnTe进行化学抛光,发现用2%B r2-M eOH腐蚀时速率平稳且易于控制,能有效去除表面划痕,获得光亮表面。AFM分析发现,抛光后表面粗糙度降低30%,平整度增加。XPS分析发现CdZnTe的(111)Cd极性面变成了富Te非极性表面。PL分析发现表面陷阱态密度降低,表面晶格的完整性增强。

Different concentrations of Brz-MeOH were used for the chemical polishing of CdZnTe（CZT） surface. It was found that the CZT wafer in 2% Brz-MeOH had a stationary erosion rate and could be easily controlled. The surface scratches were removed and a shiny surface was obtained. Through AFM analysis, it was proved that the chemical polishing could reduce the surface roughness about 30%. XPS analysis found that the （111）Cd polar face became the nonpolar Te rich surface after the chemical polishing. PL analysis showed that the chemical polishing could reduce the surface trap state density and improve the perfection of surface lattice.