c面白宝石衬底表面形貌对气相传输平衡法制备的γ-LiAlO_2层质量的影响(英文)

Effect of Surface Morphology ofc-plane Sapphire Substrate on Quality of γ-LiAlO_2 Layer Fabricated by Vapor Transport Equilibration Technique

采用气相传输平衡(VTE)技术,在(0001)面白宝石衬底表面上成功地制备出单相-γL iA lO2层。研究了白宝石衬底表面形貌对-γL iA lO2层质量的影响,发现白宝石衬底的表面粗糙度和退火处理是两个影响-γL iA lO2层质量的重要因素。要制备高质量的-γL iA lO2层,适度的表面粗糙度是恰当的。对白宝石衬底进行退火处理,-γL iA lO2层的择优取向变差。并对其中可能的机理进行了探讨。

A single-phase γ-LiAlO2 layer was successfully fabricated on （0001） sapphire by vapor transport equilibration （VTE） technique. The effects of surface morphology of c-plane sapphire substrate on the quality of γ-LiAlO2 layer were investigated. We have found and verified that the surface roughness and annealing treatment of sapphire are two essential factors to affect γ-LiAlO2 layer quality on the sapphire substrate. To grow high-quality γ-LiAlO2 layer,a moderate surface roughness of sapphire substrate is suitable. The annealing treatment of sapphire substrate deteriorates the oriented growth of the γ-LiAlO2 layer on the sapphire. And the possible mechanism involved was discussed.