用MOCVD法在玻璃和Si(100)基片上制备TiO_2薄膜

Growth of TiO_2 Thin Films on Glass and Si(100) Substrates by AP-MOCVD

采用大气开放式金属有机化合物化学气相沉积方法(AP-MOCVD),以四异丙醇钛(TTIP)为原料,在不同的实验条件下分别在S i(100)和玻璃基片上制备TiO2薄膜。当气化室温度为140℃,基片温度为350℃时,玻璃基片上生长的薄膜XRD谱中只出现了锐钛矿相(200)晶面的衍射峰,表明此时薄膜高度取向,在S i(100)基片上生长的TiO2薄膜也有取向性。通过SEM观察高度取向的TiO2薄膜表面出现四边形的微结构。

TiO2 films were prepared on Si （100） and glass substrates using TrIP under the different preparation conditions by AP-MOCVD. Highly oriented anatase films on both glass and Si （100） substraces were obtained at a TTIP vaporizing temperature of 140℃ and a substrate temperature of 350℃. A（200） peak was the only one that appeared in the XRD pattern of anatase film on the glass substrate deposited at 350℃. The high oriented anatase crystalline had a rectangular facet.