用于四结电池的InGaAsN材料研究

Research on InGaAsN for Quadruple-junction Solar Cells

随着InGaP2/InGaAs/Ge三结太阳电池技术日趋成熟,具有更高理论效率的基于GaAs体系的四结电池新材料A lInGaP/InGaAs/?(新材料)/Ge已经受到人们的关注,经过计算,要求新材料的禁带宽度应该为0.95 eV^1.05 eV。InxGa1-xAs1-yNy材料的禁带宽度可以调整为0.95 eV^1.05 eV,是有望实现突破的材料。我们通过选取合适的生长方案,在D180MOCVD系统上外延生长了InxGa1-xAs1-yNy材料,并通过高分辨X光双晶衍射仪、分光光度计以及电化学电容-电压(EC-V)测试仪等对材料性能进行了分析。获得了室温下禁带宽度为1.17 eV的InxGa1-xAs1-yNy材料。

The InGaP2/InGaAs/Ge triple-junction solar cells technology has been mature. The materials of GaAs based quadruple-junction solar cells which have a higher theory conversion efficiency are attracting the researchers. InxGa1-xAs1-yNy is an appropriate candidate which the band gap can vary from 0.95eV to 1.05ev. InxGa1-xAs1-yNy layers were grown by metal organic chemical vapor deposition on the GaAs substrate in D180 MOCVD system. The characteristics of InxGa1-xAs1-yNy were studied by using highresolution double-crystal X-ray diffraction, spectrophotometer and electrochemical C-V profiler. The band gap of the InxGa1-xAs1-yNy was 1.17eV at room temperature.