低能离子束辅照对溅射镀TiN膜生长的影响

EFFECT OF LOW-ENERGY ION FLUX IRRADIATION ON THE GROWTH OF TiN FILM

用诱导型等离子体辅助磁控溅射装置在Si(100)表面低温沉积TiN膜,研究了高密度低能量(≈20eV)离子束辅照对溅射镀TiN膜生长、结构和性能的影响.结果表明,高密度低能离子束辅照会改变TiN膜的择优生长方向并使薄膜致密化.即使沉积温度低于150℃,当入射基板离子数和Ti原子数的比值J-i/J_(Ti)≥4.7时,沉积的TiN膜仍可具有完全的(200)面择优生长,薄膜微观结构致密,硬度达到25GPa,残余压应力小.

TiN films were synthesized by inductively coupled plasma assisted magnetron sputtering technique. The effects of the irradiation of ion flux with high-density and low-energy （≈20 eV） on the growth, microstructure and properties of TiN films have been investigated. The results show that such irradiation can alter the preferred orientation of TiN films and make the film densify. Even at a lower deposition temperature than 150℃, when the incident ion/metal ratio Ji/JTi≥4.7, the deposited films have complete （200） preferred growth, much dense microstructures, a hardness of 25 GPa and low residual stress.