高能离子束辅助沉积制备钛纳米膜

Ti Nanofilm Prepared with High Energy Ion Beam Assisted Deposition

用离子束溅射沉积和高能离子束辅助沉积方法制备了具有择尤性的钛纳米薄膜,并采用原子力显微镜、X射线衍射仪和俄歇电子谱仪研究了试样表面预处理、离子束流和温度等离子束工艺参数对钛薄膜结构的影响。结果表明:离子束溅射沉积的钛膜在[002]和[102]晶向上呈现出明显的择尤生长现象,并分别在该两个晶向上表现出纳米晶型和非纳米晶型结构;当用高能离子束辅助沉积时,[102]晶向择尤生长现象消失,且钛膜的结构对束流变化较为敏感,束流较低时,钛膜为纳米结构且择尤生长现象减弱,而束流增加时晶粒长大,择尤生长现象又增强。另外钛膜容易受到氧的污染,并随辅助离子强度增加而增强。

The preferential growing Ti nanofilms had been prepared with ion beam sputtering deposition and ion bean assisted deposition. The effects of material surface pretreatment, ion flux density and deposition temperature on structure of Ti film were studied by atomic force microscopy, X-ray diffraction and Auger electron spectroscopy. Ti film deposited by Ar^＋ beam sputtering method grew obviously preferially along [002] and [102] directions, which showed the nanometer-crysitalline-style and nonnanometer-crysitalllne-style structures, respectively. When deposition of Ti films was assisted by high energy Ar^＋ beam, the preferential growth disappeared along [102] direction, and the structure of Ti film was susceptive to ion flux density. Ti nanofilm was formed with low beam flux Ar^＋ assisted bombardment, the preferential growing trend became weaker than deposited by Ar^＋ beam sputtering method. However with the increase of Ar^＋ ion flux density, grains of Ti film got coarse, the preferential growth became stronger too. Besides, Ti film was easy to be oxidized by residual gas, and this trend increased with ion flux density.