n+p组合结构臭氧气体传感器研究

n+p Combined Structure Semiconductor Ozone Gas Sensor

n+p型半导体气体传感器是基于气体传感器互补增强原理的一种新结构半导体气体传感器。该种传感器是由两种传导类型不同的敏感体A和B构成,A是n型半导体材料,B是p型半导体材料。理论分析表明:当敏感体A和B满足一定条件时,该种传感器灵敏度高、热稳定性好,在理论的指导下,通过实验和比较,获得了性能较好的n+p组合结构臭氧敏气体传感器。实验结果与理论分析符合得很好。

n ＋ p structure semiconductor gas sensor based on the compensation-multiplication principle is a new type gas sensor. The sensor is composed of two sensitive materials A and B whose conductive types are not the same, The material A is a n-type material, and B is a p-type material. The results analyzed from the theoretical viewpoint showed that the n ＋ p combined structure semiconductor gas sensor has higher sensitivity and better thermal stability when the materials A and B satisfied certain conditions. The conditions to achieve these characteristics of the n ＋ p combined structure semiconductor gas sensor were presented. The perfect n ＋ p combined structure ozone gas sensor was fabricated and tested, The experimental results showed that they concurred with theoretical analysis very well.