摘要
In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.
In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals （nanoclusters） in buried oxides introduced by ion implantation.
关键词
晶体管
硅
SOI
放射性
NMOS
Silicon on insulator, Ion implantation, Total-dose irradiation effect, Enclosed gate, Threshold voltage shift, Leakage current
