磁控溅射制备ZnO薄膜及其掺杂的研究

Growth and Doping of ZnO Films by Magnetron Sputtering

利用磁控溅射制备了纯ZnO薄膜,并在NH3O-2A-r气氛中溅射Zn靶实现了ZnO薄膜的N掺杂;利用双靶共溅的方法分别制备了Al掺杂和N+Al掺杂样品。原子力显微镜(AFM)观察显示各ZnO薄膜样品具有较好的晶粒分布,退火处理能够显著提高薄膜的结构状态,N+Al共掺杂样品具有较好的表面平整度;在438cm-1附近观察到了喇曼谱特征峰;透射光谱揭示了激子的吸收特征和掺杂样品的吸收边向短波方向移动;发射光谱测试表明,掺杂样品比未掺杂样品有更强的紫外发射;同时分析了ZnO薄膜的掺杂机理。

Pure and N-doped zinc oxide （ZnO） thin films were prepared by magnetron sputtering of zinc in 02-Ar and NH3-O2-Ar atmosphere respectively, while Al-doped and N＋Al co-doped ZnO films were grown by co-sputtering technique using zinc and aluminum as targets. AFM observation shows that the films have good quality. Annealing of the films leads to a remarkable improvement of the morphology. The N＋A1 co-doped sample ZnO films give rise to characteristic Raman bands veals a characteristic absorption of excitons and a shows a very uniform nanocrystalline structure. at about 438 cm-1. The transmission spectra reshift of the absorption edge for the doped ZnO films towards short wavelength. The doped samples show stronger photoluminescence than the undoped ones. The doping mechanisms are discussed.