摘要
单端正激变换器设计中应注意的问题ＴｈｅＤｅｓｉｇｎｏｆＳｉｎｇｌｅ－ｅｎｄｅｄＰｏｓｉｔｉｖｅＥｘｃｉｔａｔｉｏｎＣｏｎｖｅｒｔｅｒ空军雷达学院钟炎平（武汉４３００１０）单端正激变换器因电路结构简单、成本低廉，在中、小功率场合得到广泛应用。变换器能否...
Characteristics of various power semiconductor devices,such as MOSFETs,IGBTs,SCRs and power diodes are discussed in this paper based on experimental and 2 dimensional device simulation results for temperature higher than liquid nitrogen(77K).
出处
《电力电子技术》
CSCD
北大核心
1996年第2期60-61,共2页
Power Electronics
关键词
变换器
单端正激变换器
设计
power semiconductor devices
low temperature
characteristics
2 dimension
simulation
