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高性能阴极荧光分析系统及其在氮化物半导体材料研究中的应用 被引量：2

Investigation of group-III nitrides semiconductor by using high performance cathodoluminescence system
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摘要 本文介绍由场发射环境扫描电镜和高性能阴极荧光谱仪构成的联合分析系统。该系统在图像质量、图像空间分辨、阴极荧光成像及光谱分析等方面具有优越的性能。利用这一系统对氮化物半导体材料的微观特征、器件结构和光学性能的相互关系进行研究,获得许多有意义的结果。 A set of instrument of Field Emission Environment Scanning Electron Microscope / High Performance Cathodoluminescence has been described in brief. This system has superior performance in image quality, space resolution , ？ m and nm Cathodoluminescence image and spectrum analysis of semiconductor materials. We have utilized this equipment to investigate interactions between micro-charactrization of the materials, structure of the device and optical performance in group-Ⅲ nitrides. Many meaningful results have been obtained.
作者 徐军 徐科 陈莉 张会珍 陈文雄
机构地区 北京大学物理学院电子显微镜实验室 北京大学物理学院宽禁带半导体研究中心
出处 《现代仪器》 2005年第5期22-25,共4页 Modern Instruments
基金 "国家973项目"的资助 (批准号:2002CB613505)
关键词 氮化物半导体材料 高性能阴极荧光分析系统 场发射环境扫描电镜 高性能阴极荧光谱仪 图像质量 图像空间分辨 阴极荧光成像 光谱分析 微观特征 器件结构 光学性能 High performance cathodoluminescence Field emission ESEM Group-Ⅲ nitrideso
分类号 TN304.2 [电子电信—物理电子学]
  • 相关文献

参考文献15

  • 1F.A. Ponce, D. P. Bour,Nitride-based semiconductors for blue and green light-emitting devices,Nature 1997,386:351 ～ 359.
  • 2H. Amano, T. Tanaka, et al., Room-temperature violet stimulated emission from optically pumped A1GaN/GaInN double heterostructure ,Appl. Phys. Lett. 1994, 64:1377.
  • 3M. Koike, S. Yamasaki, et al., High-quality GaInN/GaN multiple quantum wells, Appl. Phys. Lett. 1996, 68:1403.
  • 4A.Y. Kim, W. G? tz, et al., Performance of High-Power AlInGaN Light Emitting Diodes, Physica status solidi (a) ,2001,188:15～21.
  • 5M.R. Krames, J. Bhat, et al. , High-Power Ⅲ-Nitride Emitters for Solid-State Lighting ,Physica status solidi (a) ,2002,192: 237 ～ 245.
  • 6S. Arulkumaran, M. Sakai, et al., Improved dc characteristics of A1GaN' GaN high-electron- mobility transistors on A1N' sapphire templates, Appl. Phys. Lett. 2002, 81:1131.
  • 7J. P. Bergman, T. Lundstr? m, et al., Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface ,Appl. Phys. Lett. 1996, 69:3456.
  • 8H. Saijo, J. T. Hsu, et al., Mapping of multiple-quantum-well layers and structure of V defects, in InGaN' GaN diodes, Appl.Phys. Lett. 2004, 84:2271.
  • 9R. W. Martin, P. R. Edwards, et al., Cathodoluminescence spectral mapping of Ⅲ-nitride structures, physica status solidi(a) 2004,201:665～672.
  • 10S. A. Galloway, P. Miller, P. Thomas, R. Harmon, Advances in cathodoluminescence characterisation of compound semiconductors with spectrum imaging, physica status solidi(c) 2003,0:1028 ～ 1032.

二级参考文献5

  • 1姚王非,陈云琳,杨治安,阮永风,陆明.扫描电镜加工铌酸锂晶体电畴反转光栅的研究[J].电子显微学报,1997,16(2):148-151. 被引量：3
  • 2M Yamada, N Nada, M 5aitoh, et al. First-order quasiphase matched LiNbO3 waveguide periodically poled by applying an external field for efficient field blue second-harmonic generation[J]. Applied Physics Letters, 1993,62(5) :435 ～ 436
  • 3T. Suhara et al. Theoretical analysis of waveguide second- harmonic generation phase matched with uniform and chirped gratings[J]. IEEE. Quantum Electron, 1990,1265
  • 4Mjyers I.E., Eckardt R. C., Fejer M. M. et al, Quasiphase- matched Optical Parametric Oscillators in Bulk Periodically Poled LiNbO3, J. Opt. Soc., Am, B, 1995,12(11):2102 ～ 2116
  • 5Shur V. Y., et al, Recent achievements in Domain Engineering in Lithium Niobate and LithiumTantalate, Ferroelectrics, 2001,257:191 ～ 202

共引文献2

同被引文献7

  • 1Krames M R, Bhat J, Collins D, et al. High-power Ⅲ-nitride emitters for solid-state Lighting. Phys Status Solidi A, 2002, 192:237.
  • 2Martin R W, Edwards P R, O' Donnell K P., et al. Cathodoluminescence spectral mapping of Ⅲ-nitride structures. Phys Status Solidi A,2004,201:665.
  • 3Galloway S A, Miller P, Thomas P,et al. Advances in cathodoluminescence characterisation of compound semiconductors with spectrum imaging. Phys Status Solidi C, 2003,0:1028.
  • 4Reshchikov M A,Yi G C,Wessels B W. Behavior of 2.8- and 3.2- eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities. Phys Rev B, 1999,59:13176.
  • 5Li J, Nam K B, Lin J Y, et al. Optical and electrical properties of Al-rich AlGaN alloys. Appl Phys Lett,2001,79:3245.
  • 6Kaufmann U, Kunzer M, Maier M, et al. Nature of the 2.8eV photoluminescence band in Mg doped GaN. Appl Phys Lett, 1998, 72 : 1326.
  • 7陈恩光,衣立新,王申伟,刘尧平,苏梦蟾,唐莹,王永生.氢钝化对硅纳米晶发光强度的影响[J].光谱学与光谱分析,2008,28(2):246-248. 被引量：4

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二级引证文献3

现代仪器
2005年 第5期

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