摘要
介绍了77K下薄膜状绝缘材料电气强度的测试方法,研究了聚酰亚胺/蒙脱土、聚酰亚胺/云母、聚酰亚胺/SiO2三个系列的低温电气强度。结果表明:前两个系列填料对电气强度的影响趋势相同,均存在最佳填料含量,聚酰亚胺/蒙脱土电气强度最佳可达215.77MV/m;对于聚酰亚胺/SiO2系列,电气强度比纯PI薄膜略有下降,且含量较高时下降明显,但仍然可以满足应用的要求。
In this paper, a method for measuring cryogenic electric breakdown strength of insulating polymer films are introduced. The electric breakdown strength of polyimide/ montmorillonite （PI/MMT）, polyimide/mica （PI/mica）, polyimide/SiO2 （PI/SiO2） nanocomposite films are measured and studied at 77K. The results show that montmorillonite and mica fillers have similar effects on the electric breakdown strength and an optimal filler content exists for both PI/MMT and PI/ mica systems. For PI/ MMT system, the highest electric breakdownstrength is 215.77MV/m, while for PI/SiO2 system the electric breakdown strength is a little lower than for pure polyimide and decreases with increasing filler content, and still meets the requirement of practical applications.
出处
《绝缘材料》
CAS
2005年第5期27-30,共4页
Insulating Materials
基金
中国科学院百人计划研究基金项目
北京市科委重大项目(编号:H020420020230)
