摘要
在N型AlxGa1-xN(x=0.19～0.25)薄膜表面热蒸发Au金属薄膜,经过退火后制成MSM结构的光电器件.测试其I-V曲线,从金属-半导体MSM结构肖特基二极管的理论模型推导了这种新型紫外器件的理想伏安特性,并将实验结果与理论模型相拟合,为制造导弹来袭紫外告警探测器提供研究依据.
Ultraviolet photodiodes were fabricated by Au deposition on N type AlxGa1-xN（x = 0.19 -0.25 ）and optimized by anneal. I-V characteristics of the Metal-Semiconductor-Metal（MSM） diodes were measured in the experiment and calculated theoretically. The study on the comparision of the data exhibited the possibility of the manufacture of missile threat warning detector.
出处
《航空兵器》
2005年第5期27-29,共3页
Aero Weaponry
关键词
ALGAN
紫外探测器
MSM
伏安特性
AlGaN
UV photodetecter
Metal-Semiconductor-Metal
I-V characteristics
