国外新器件研制和应用现状

The Development and Application of the Novel Power Electronic Device at Abroad

当前,电力半导体器件的发展重点是采用新的原理,开发新的MOS双极器件(IGBT和MCT)和场控器件(SITH)。本文介绍国外这几种器件的研制发展现状,以及这些器件的应用情况。

At present,the devoloping trends of the power electronic device is adopting the new priciple and researching new MOS double gate devices (IGBT and MCT)and field-control device (SITH). This paper introduces the state of development and application of these device at abroad.