摘要
讨论了耦合双量子阱的光荧光性质,并着重对不同垒宽样品的荧光性质与激发功率的关系进行了详细讨论。
The PL properties of asymmetric coupled double quantum wells (ACDQW) structures were studied.The dependence of nonresonant tunneling rate on excitation power for different interbarrier thickness was discussed in detail.The competition between the intersubband relaxations was analyzed.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1996年第2期103-106,共4页
Journal of Infrared and Millimeter Waves
关键词
光荧光
不对称耦合
双量子阱
半导体
photoluminecence,asymmetric coupled double quantum wells,intersubband relaxation.