加磁场生长SI—GaAs单晶
-
1叶水驰,蓝慕杰,鲍海飞,于杰,周士仁.外加横向磁场生长优质HgCdTe晶体[J].人工晶体学报,1997,26(3):326-326.
-
2卢宁,黄永谦.MCZ硅的氧碳含量及电阻率均匀性[J].上海微电子技术和应用,1996(1):4-8.
-
3李联合,潘钟,张伟,林耀望,王学宇,吴荣汉.Characterization of Ga NAs/ Ga As and Ga In NAs/ Ga As Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy: Effects of Ion Damage[J].Journal of Semiconductors,2001,22(1):31-34.
-
4徐岳生.直拉硅单晶生长的现状与发展[J].河北工业大学学报,2004,33(2):52-58. 被引量:22
;