摘要
研究了单极型有机半导体酞菁铜静电感应三极管(OSIT)导电沟道内纵向电势分布． 依据电磁场理论,应用有限元法对其导电沟道内的电势分布进行了数值计算与解析．解析结果证 明,导电沟道内鞍部点附近纵向的一维电势分布满足二次方关系．
The potential distribution in the conductive channel of unipolar organic semiconductor CuPc static induction transistor （OSIT） in vertical direction is studied in this paper. According to electromagnetic theory, the potential in the potential the conductive channel is calculated and analyzed using finite element method. The results prove that profile satisfies the quadratic power law along the channel in the vicinity of the saddle point.
出处
《哈尔滨理工大学学报》
CAS
2005年第5期74-77,共4页
Journal of Harbin University of Science and Technology
基金
黑龙江省科技厅攻关项目(GC04A107).
关键词
静电感应三极管
OSIT
有限元法
有机薄膜三极管
有机半导体
static induction transistor
OSIT
finite element method
organic film transistor
organic semiconductor
