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Current-Induced Resistive Effect in Cu/MgO/La0.9Sr0.1 MnO3 Trilayers on SrTiO3 (001) Substrates

Current-Induced Resistive Effect in Cu/MgO/La0.9Sr0.1 MnO3 Trilayers on SrTiO3 (001) Substrates
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摘要 Cu/MgO/La0.9Sr0.1MnO3 pillars are fabricated on SrTiO3 (001) substrates by the micro-fabrication patterning processes. Their electric transport properties have been measured in the temperature range from the temperature smaller than the Curie one to 300K. At 125K there emerges abrupt breaks of output voltage in voltage-current (Ⅴ-Ⅰ) curves, corresponding to switching in resistance to metastable states, and finally two closed loops are formed with double threshold biases. Around room temperature the Ⅴ-Ⅰ characteristics are non-ohmic and show some gradual hysteresis when sweeping the current in a round-trip scan. A large current-induced resistive change △R/R0, ~-63.2%, is obtained under a current density of 1.0 × 10^4 Acm^-2. Especially, △ R/ R0 depends linearly on the applied current and is independent of the applied magnetic field. The current-induced resistive effect should be of interest for various applications such as switching and field effect devices. Cu/MgO/La0.9Sr0.1MnO3 pillars are fabricated on SrTiO3 (001) substrates by the micro-fabrication patterning processes. Their electric transport properties have been measured in the temperature range from the temperature smaller than the Curie one to 300K. At 125K there emerges abrupt breaks of output voltage in voltage-current (Ⅴ-Ⅰ) curves, corresponding to switching in resistance to metastable states, and finally two closed loops are formed with double threshold biases. Around room temperature the Ⅴ-Ⅰ characteristics are non-ohmic and show some gradual hysteresis when sweeping the current in a round-trip scan. A large current-induced resistive change △R/R0, ~-63.2%, is obtained under a current density of 1.0 × 10^4 Acm^-2. Especially, △ R/ R0 depends linearly on the applied current and is independent of the applied magnetic field. The current-induced resistive effect should be of interest for various applications such as switching and field effect devices.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第11期2936-2939,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 50371102 and 10334070, the National Key Basic Research and Development Programme of China under Grant No 2004CB619004, and China Postdoctoral Science Foundation.
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