GaN基材料的特性及应用

Characteristics and Application of GaN-based Semiconductor Materials

GaN具有禁带宽度大、热导率高、电子饱和漂移速度大和介电常数小等特点,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。

GaN materials have the characteristics of wide bandgap, high thermal conductivity, large electron saturation shift velocity and low dielectric constant. They have extensive application prospect in fields such as high brightness light emitting diodes, short wavelength laser diodes, high performance UV detector, and high temperature, high frequency, large power semiconductor devices.