摘要
本文首先介绍功率半导体器件的四个发展阶段,重点分析了IGBT技术成功的因素其性能特点,最后介绍本公司研制的功率半导体新器材-完全具有自我保护功能的光触发大功率晶闸管以及研制13kV光触发晶闸管的未来发展规划。
Four development periods of power device are introduced and the key of success of 1GBT technology is analyzea, In me end a new power semiconductor device of the company is introduced. Light-triggered high power thyristor with the function of self-protection and the development research plan of 13kV light-triggered thyristor.
出处
《电力电子》
2005年第4期17-22,共6页
Power Electronics
