极谱法测定砷化镓半导体中的铟

Polarographic Determination of Indium in Semiconductor Gallium Arsenide

提出了用微分脉冲极谱法测定砷化镓半导体中铟含量的方法。讨论了测定方法的准确度、灵敏度及干扰情况。测定结果表明，用微分脉冲极谱法测定砷化镓中的铟可测定至５×１０－５ｍｏｌ／Ｌ，在砷化镓样品量小于０．１ｇ时，其相对标准偏差小于３％。

This paper puts forward the determination method for indium in gallium arsenide by means of differential pulse polarography.The method is also disscussed with reference to interference,accuracy and sensitivity.The results of the determination show that the differential pulse polarography 5×10-5mol/L indium can be easily determined in samples of GaAs not greater than 0.1g with a reletive stardard deviation(r.s.d.)of about 3%.The method can be used very well in the determination of In(Ⅲ) in gallium arsenide.