摘要
本文详细讨论了Eupec和Infineon最新一代600VIGBT3技术。介绍器件的制造技术后,将详细分析第三代器件的静态和动态特性。特别讨论的是新推出的最大结温为175℃器件的必要条件和结果。与第二代模块比较,逆变器的效率和输出功率提高了10-30%。还讨论了与EMC特性相关的开关波形的改善。从IGBT损耗和短路时间折衷考虑,重新定义了短路能力。
The paper discusses in detail eupec＇s and Infineon＇s latest 600V IGBT3 technology. After introduction of the device fabrication technology the static and dynamic properties of the 3rd generation devices are analyzed in detail. A special focus is given on the prerequisites and consequences of the newly introduced maxi-mum junction temperature of Tjmax = 175℃. It is shown that inverter efficiencies and output power may be improved by 10 - 30% as compared to 2nd generation modules. Improvements of EMC-relevant features of the switching waveforms are discussed. The re-definition of the specified short circuit capability is discussed from a trade-off point of view between IGBT losses and short circuit withstand time.
出处
《电力电子》
2005年第2期76-79,共4页
Power Electronics
