纳米Si薄膜的结构及压阻效应

THE STRUCTURE AND PIEZO-RESISTANCE EFFECT OF HYDROGENATED NANO-Si FILMS

使用ＨＲＥＭ及ＳＴＭ技术检测了纳米Ｓｉ薄膜的微结构纳米Ｓｉ薄膜由大量的细微Ｓｉ晶粒以及大量的晶粒间界面区组成．这一特殊的结构造成纳米Ｓｉ薄膜具有较大的压阻效应及较高氢含量．本文分析讨论了薄膜微结构对其压阻效应的作用。

In this report Authors employed the HREM and STM to detect the micro-structure of nc-Si:H films, which are fabricated by the PECVD deposition method. The nc-Si:H films are consisted with a mass of micro-grains and a great deal of interfaces among grains. The unique structrue character of nc-Si:H films is the main reason for the largest piezo-resistance effect and a higher value of hydrogen content in the films. The relationship of microstructure and the piezo-resistance effect of films were discussed. It is suggested that the nc-Si: H film may becbme an idealized sensor materials.