摘要
将CdS蒸镀于电致发光器件中,测量这些器件的电学和光学特性,发现CdS层可以提供较多的电子但是,样品ITO/SiO/SiO2/ZnS:X/CdS/SiO2/SiO/Al(X=Mn2+,Sm3+的亮度明显低于不含CdS的样品,说明这些电子在向ZnS层输运的过程中能量有所降低在样品ITO/SiO/SiO2/ZnS:X/SiO2/CdS/Al中,CdS产生的电子经过SiO加速而获得了较高的能量,提高了TFEL器件发光亮度这一样品的亮度比上述含CdS的样品的亮度高2.5个数量级,且其阈值电压较低,亮度-电压特性好.在这一样品达到饱和的电压下,含CdS的样品才刚刚起亮,这说明该样品的发光主要是CdS提供的电子对发光的贡献。
Q-V charater of the samples containing CdS is compared with that of the samples not containing. The transfer charge of the samples with CdS is more larger than that of the samples without CdS.This indecates that CdS can provide more electrons. But during these electrons transfer into ZnS layer, the energy is reduced. When these electrons are accelerated by SiO2, the luminescent intensity increases 2.5 times in orders. When the samples with CdS gets the maximum luminescent intensity, the samples without CdS just starts to emite at the same voltage. ms indicates that the lumineseence of the samples with CdS is due to the electrons from CdS.
出处
《材料研究学报》
EI
CAS
CSCD
1996年第1期63-67,共5页
Chinese Journal of Materials Research
基金
国家自然科学基金
关键词
硫化镉
薄膜
电致发光器件
传导电荷
多层薄膜
thin film electroluminescence(TFEL) primary electrons transfer charge impact ionization threshold voltage