Sn—SnO_x薄膜的组织结构及湿敏性

ORGANIZATION FORM AND HUMIDITY SENSITIVITY OF Sn-SnO_x THIN FILM

报道了一种制备Ｓｎ—ＳｎＯｘ湿敏薄膜的新工艺（ＶＥＴＯ）．首先在１ｍＰａ的真空下蒸发纯金属Ｓｎ质量分数９９９ｍｇ·ｇ－１，衬底（Ａｌ２Ｏ３陶瓷基片）温度控制在１５０～２５０℃；蒸发的Ｓｎ膜在空气中缓慢氧化，即可获得湿度敏感的Ｓｎ—ＳｎＯｘ薄膜．利用ＸＲＤ和ＳＥＭ分析了膜的晶体结构和表面形貌环境湿度ＲＨ从１１％变到９７％肘，膜阻抗变化约三个量级，膜电导是电子电导和离子电导的混合．在低温区电子电导是主要的，在高温区离子电导占优势．

new method (VETO) to prepare humidity sensitive film of Sn-SnOx has been reported.Firstly, pure tin (mass fraction 999mg/g) was evaporated on A12O3 ceramic substrates kept at 150～250℃in a pressure of 1 mPa. The humidity sensitive films could be got after the tin films were slowly oxidized in air.XRD and SEM were employed to analysis the structure and the surface microstructure. It is found that the impedance of the films changed about three orders of magnitude with changing the relative humidity from 11to 97%. The conductance mechanisms are both ionic and electronic.