摘要
采用低温(21 K-300 K)稳态表面光伏实验方法,对腐蚀前后的半绝缘砷化镓(S i-GaAs)样品进行了大量的实验测量,发现其表面光伏谱可分为三个区域,并对三个区域的成因进行了合理的物理分析。
A lot of experimental measurements have been performed on the undoped semi - insulating CaAs sample before and after etching. It is found that the surface photovoltage spectrum of semi - insulating GaAs can be divided into three regions. Furthermore, the theoretical causes of forming three regions is analyzed and discussed.
出处
《江西科学》
2005年第5期548-551,共4页
Jiangxi Science
关键词
半绝缘GAAS
表面光伏谱
三个区域
Semi - insulating GaAs, Surface photovoltage spectrum,Three regions
