二硫化铁光电薄膜制备技术的研究进展

The Research Progress of Preparing Pyrite Photoelectric Thin Films

黄铁矿结构的二硫化铁(FeS2)是一种具有合适的禁带宽度(Eg≈0.95 eV)和较高光吸收系数(当λ≤700 nm时,α=5×105cm-1)的半导体材料,而且其组成元素在地球上储量丰富、无毒,有很好的环境相容性。因此,FeS2薄膜在光电子以及太阳能电池材料等方面有潜在的应用前景,受到人们的广泛关注。本文从不同制备方法所制备出的二硫化铁薄膜的研究结果,来分析二硫化铁薄膜的研究状况。

Pyrite of FeS2 is a semiconductor with a suitable energy band gap （Eg≈0.95 eV）and a very high optical absorption coefficient （α≥5 × 10^5 cm^-1 when λ≤700 nm）. And pyrite which is composed of very abundant and nontoxic elements is a suitable material for the environment. Therefore, pyrite is receiving growing attention because of its promising potential for applications as an optoelectronic and photovoltaic materials. In this paper, the research progress of pyrite thin films has been reviewed from the research results of the films prepared by various methods.