摘要
对激光化学气相沉积纳米硅的红外光谱进行了研究，结合红外光声光谱考察了退火处理对其红外光谱吸收峰位置的影响，对纳米硅的红外吸收峰进行了标识和讨论。
Infrared(IR) spectra of the nanosized silicon produced by laser-induced chemicalvapor deposition have been studied. The influence of annealing treatment on the IR absorption peaks of the nanosized silicon was investigated by means of infrared photoacousticspectroscopy. The IR absorption peaks have been assigned.
出处
《量子电子学》
CAS
CSCD
1996年第1期67-73,共7页
基金
广东省自然科学基金
广东省博士后基金
关键词
红外光谱
纳米硅
激光
化学气相沉积
infrared spectra, nanosized silicon, laser chemical vapor deposition
