1995年真空微电子学的进展评述

A Survey on the Progress of Vacuum Microelectronics in 1995

真空微电子学是９０年代国外迅速发展的一门新学科，本文综述了１９９５年的新进展。在场致发射阴极方面研究工作向深度和结合实际应用发展，研究工作十分活跃。Ｍｏ和Ｓｉ－ＦＥＡ都取得了新的进展。在微波管方面的应用，１０ＧＨｚ的速调四极管已在总装，技术上取得了突破性进展。美国和法国已建立数个ＦＥＤ的生产工厂，产品正走向市场。

Rapid progress has taken place on the research of vacuum microelectronics overseas since the 1990 s.This paper presents the latest advance in 1995.Further research on field emission cathode is even active,and is carried out into the more practical application fields,either Mo-FEA or Si-FEA emission characteristics have been improved.In the microwave tube application fields,10 GHz klystrode has been developed and obtained a technical breakthrough.A number of FED manufacturing factories have been established in France and America,the FED products are entering market.