摘要
介绍了毫米波单片集成电路设计中的两个关键技术,有源器件(如PHEMT)等效电路模型的建立和无源元件(如微带T形结、十字结、转角等)精确电磁场模型的建立,同时介绍了毫米波单片放大器的CAD设计过程。
This paper introduces two key techniques of millimeter wave MMIC design,active device(such as PHEMT)equivalent circuit modelling and passive element(such as T junction,Cross junction,Bend etc.)accurate EM modelling.A computer aided design of MIMIC amplifier is also provided.
出处
《半导体情报》
1996年第2期11-15,共5页
Semiconductor Information