SIPOS／Si异质结特性的研究

A Study on the Properties of SIPOS/Si Heterojunctions

采用红外吸收光谱分析了ＳＩＰＯＳ薄膜中Ｓｉ－Ｏ键的结构，对比分析了热退火和快速灯光退火对ＳＩＰＯＳ中Ｓｉ－Ｏ键结构的影响，并结合ＳＩＰＯＳ／Ｓｉ结构的Ｃ－Ｖ、Ｉ－Ｖ测试结果，对该结构的异质结特性进行了分析。

SIPOS films are prepared and annealed both in heat and flashlight manners. Based on the infrared absorption spectrum of SIPOS films, properties of Si-O bonds in the films are analyzed. To study the properties of SIPOS/Si heterogeneous junctions, C-V and I-V measurement were made on the structures. By comparison, effects of annealing manners on properties of the SIPOS films and the SIPOS/Si heterojunctions are investigated.